SQM120N08-05 www.vishay.com vishay siliconix s11-2391-rev. c, 12-dec-11 1 document number: 72058 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n-channel 75 v (d-s) 175 c mosfet features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? package with low thermal resistance ? aec-q101 qualified d ?100 % r g and uis tested ? compliant to rohs directive 2002/95/ec notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) 75 r ds(on) ( ? ) at v gs = 10 v 0.0048 i d (a) 120 configuration single d g s n-channel mosfet to-263 s d g top view ordering information package to-263 lead (pb)-free and halo gen-free SQM120N08-05-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 75 v gate-source voltage v gs 20 continuous drain current t c = 25 c a i d 120 a t c = 125 c 106 continuous source curr ent (diode conduction) a i s 120 pulsed drain current b i dm 480 single pulse avalanche current l = 0.1 mh i as 66 single pulse avalanche energy e as 217 mj maximum power dissipation b t c = 25 c p d 375 w t c = 125 c 125 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 c/w junction-to-case (drain) r thjc 0.4
SQM120N08-05 www.vishay.com vishay siliconix s11-2391-rev. c, 12-dec-11 2 document number: 72058 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 75 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 - 4.0 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 75 v - - 1.0 a v gs = 0 v v ds = 75 v, t j = 125 c - - 50 v gs = 0 v v ds = 75 v, t j = 175 c - - 250 on-state drain current a i d(on) v gs = 10 v v ds ??? 5 v 120 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 30 a - 0.0039 0.0048 ? v gs = 10 v i d = 30 a, t j = 125 c - - 0.0087 v gs = 10 v i d = 30 a, t j = 175 c - - 0.0110 forward transconductance a, b g fs v ds = 15 v, i d = 30 a - 102 - s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz - 8158 10 200 pf output capacitance c oss - 865 1085 reverse transfer capacitance c rss - 567 710 total gate charge c q g v gs = 10 v v ds = 35 v, i d = 110 a - 141 212 nc gate-source charge c q gs - 32.6 - gate-drain charge c q gd - 39.1 - gate resistance r g f = 1 mhz 0.6 1.2 1.9 ? turn-on delay time c t d(on) v dd = 35 v, r l = 0.32 ? i d ? 110 a, v gen = 10 v, r g = 1 ? -1929 ns rise time c t r -3147 turn-off delay time c t d(off) -5583 fall time c t f -1523 source-drain diode ratings and characteristics b pulsed current a i sm - - 480 a forward voltage v sd i f = 100 a, v gs = 0 v - 0.9 1.5 v
SQM120N08-05 www.vishay.com vishay siliconix s11-2391-rev. c, 12-dec-11 3 document number: 72058 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 40 80 120 160 200 0 6 12 18 24 30 v gs =10vthru6v v gs =4v v gs =5v v d s - drain-to- s ource voltage (v) i d - drain current (a) 0 40 80 120 160 200 0 1428425670 i d - drain current (a) - tran s conductance ( s ) g f s t c = 125 c t c = 25 c t c = - 55 c 0 2000 4000 6000 8000 10 000 12 000 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 c i ss c o ss c r ss v d s - drain-to- s ource voltage (v) c - capacitance (pf) 0 20 40 60 80 100 120 0246810 t c = - 55 c t c = 125 c t c = 25 c v gs - g ate-to- s ource voltage (v) i d - drain current (a) 0 0.005 0.010 0.015 0.020 0.025 0 20406080100120 v gs =10v r d s (on) - on-re s i s tance ( ) i d - drain current (a) 0 2 4 6 8 10 0 25 50 75 100 125 150 i d = 110 a v d s =35v q g - total g ate charge (nc) v gs - g ate-to- s ource voltage (v)
SQM120N08-05 www.vishay.com vishay siliconix s11-2391-rev. c, 12-dec-11 4 document number: 72058 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diod e forward voltage threshold voltage drain source breakdown vs . junction temperature 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 i d =30a v gs =10v t j - junction temperature (c) (normalized) r d s (on) - on-re s i s tance 0 0.01 0.02 0.03 0.04 0.05 0246810 t j = 25 c t j = 150 c r d s (on) - on-re s i s tance ( ) v gs - g ate-to- s ource voltage (v) 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 v s d - s ource-to-drain voltage (v) i s - s ource current (a) t j = 25 c t j = 150 c - 1.8 - 1.4 - 1.0 - 0.6 - 0.2 0.2 0.6 - 50 - 25 0 25 50 75 100 125 150 175 i d =5ma i d = 250 a v gs (th) variance (v) t j - temperature (c) - 50 - 25 0 25 50 75 100 125 150 175 v ds - drain-to-source voltage (v) t j - junction temperature (c) i d =10ma 75 79 83 87 91 95
SQM120N08-05 www.vishay.com vishay siliconix s11-2391-rev. c, 12-dec-11 5 document number: 72058 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient v ds - drain-to-source voltage (v) * v gs minimum v gs at which r ds(on) is specified - drain current (a) i d t c = 25 c single pulse 1 ms 100 ms, 1 s, 10 s, dc 100 s r ds(on) * limited by 10 ms 0.01 0.1 1 10 100 bvdss limited i dm limited i d limited 0.01 0.1 1 10 100 1000 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 1 0.01 0.001 0.1 0.0001 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance
SQM120N08-05 www.vishay.com vishay siliconix s11-2391-rev. c, 12-dec-11 6 document number: 72058 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal im pedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72058 . square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 normalized effective transient thermal impedance 0.2 0.1 duty cycle = 0.5 30 0.05 0.02 single pulse 10
document number: 71198 www.vishay.com revison: 03-jan-11 1 package information vishay siliconix to-263 (d 2 pak): 3-lead notes 1. plane b includes maximum features of heat sink tab and plastic. 2. no more than 25 % of l1 can fall above seating plane by max. 8 mils. 3. pin-to-pin coplanarity max. 4 mils. 4. *: thin lead is for sub, syb. thick lead is for sum, sym, sqm. 5. use inches as the primary measurement. 6. this feature is for thick lead. detail a (rotated 90) s ection a-a -a- -b- 0 - 5 d1 a a l1 l4 e b2 b e a c2 c l2 d l3 l m c1 c b1 b detail ?a? e1 e2 k e3 d2 d3 6 0.010 m a m 2 pl inches millimeters dim. min. max. min. max. a 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 c* thin lead 0.013 0.018 0.330 0.457 thick lead 0.023 0.028 0.584 0.711 c1 thin lead 0.013 0.017 0.330 0.431 thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 d 0.340 0.380 8.636 9.652 d1 0.220 0.240 5.588 6.096 d2 0.038 0.042 0.965 1.067 d3 0.045 0.055 1.143 1.397 e 0.380 0.410 9.652 10.414 e1 0.245 - 6.223 - e2 0.355 0.375 9.017 9.525 e3 0.072 0.078 1.829 1.981 e 0.100 bsc 2.54 bsc k 0.045 0.055 1.143 1.397 l 0.575 0.625 14.605 15.875 l1 0.090 0.110 2.286 2.794 l2 0.040 0.055 1.016 1.397 l3 0.050 0.070 1.270 1.778 l4 0.010 bsc 0.254 bsc m - 0.002 - 0.050 ecn: t10-0738-rev. j, 03-jan-11 dwg: 5843
an826 vishay siliconix document number: 73397 11-apr-05 www.vishay.com 1 recommended minimum pads for d 2 pak: 3-lead 0.635 (16.129) recommended minimum pads dimensions in inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) return to index
legal disclaimer notice www.vishay.com vishay revision: 12-mar-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products no t expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale , including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding th e design or manufacture of the part. please contact authorized vishay personnel t o obtain written terms and conditions regardin g products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu.
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